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BSZ034N04LS
BSZ034N04LS
MOSFETs BSZ034N04LS
Infineon
BSZ034N04LS
--
Diodes, Transistors and Thyristors
MOSFETs
BSZ034N04LS.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
Maximum IDSS (uA)1
Process TechnologyOptiMOS
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)3
Typical Rise Time (ns)4
Number of Elements per Chip1
Maximum Power Dissipation (mW)2100
Typical Gate Charge @ 10V (nC)25
Typical Gate Charge @ Vgs (nC)25@10V|13@4.5V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)4
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)19
Maximum Gate Threshold Voltage (V)2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)19
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)1800@20V
Maximum Drain Source Resistance (MOhm)3.4@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 40V 19A T/R
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