Product Attribute | Attribute Value |
PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Automotive | No |
Part Status | Unconfirmed |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Triple Source |
Product Category | Power MOSFET |
Maximum IDSS (uA) | 1 |
Process Technology | OptiMOS |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 3 |
Typical Rise Time (ns) | 4 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 2100 |
Typical Gate Charge @ 10V (nC) | 25 |
Typical Gate Charge @ Vgs (nC) | 25@10V|13@4.5V |
Maximum Gate Source Voltage (V) | 20 |
Typical Turn-On Delay Time (ns) | 4 |
Maximum Drain Source Voltage (V) | 40 |
Typical Turn-Off Delay Time (ns) | 19 |
Maximum Gate Threshold Voltage (V) | 2 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 19 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 1800@20V |
Maximum Drain Source Resistance (MOhm) | 3.4@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |