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BSZ0901NSI
BSZ0901NSI
MOSFETs BSZ0901NSI
Infineon
BSZ0901NSI
--
Diodes, Transistors and Thyristors
MOSFETs
BSZ0901NSI.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveUnknown
Lead ShapeNo Lead
PCB changed8
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.3
Package Height1
Package Length3.3
Product CategoryPower MOSFET
Supplier PackageTSDSON EP
Maximum IDSS (uA)500
Process TechnologyOptiMOS
Standard Package NameSON
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)4.6
Typical Rise Time (ns)7.2
Number of Elements per Chip1
Maximum Power Dissipation (mW)2100
Typical Gate Charge @ 10V (nC)41
Typical Gate Charge @ Vgs (nC)41@10V|20@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)5
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)27
Maximum Gate Threshold Voltage (V)2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)25
Typical Input Capacitance @ Vds (pF)2600@15V
Maximum Drain Source Resistance (mOhm)2.1@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 25A Automotive 8-Pin TSDSON EP T/R
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