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BSZ0909ND
BSZ0909ND
MOSFETs BSZ0909ND
Infineon
BSZ0909ND
--
Diodes, Transistors and Thyristors
MOSFETs
BSZ0909ND.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count8
AutomotiveNo
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width3
Package Height0.9(Max)
Package Length3
Product CategoryPower MOSFET
Supplier PackageWISON EP
Maximum IDSS (uA)1
Process TechnologyOptiMOS
Typical Fall Time (ns)2
Typical Rise Time (ns)2.5
Number of Elements per Chip2
Maximum Power Dissipation (mW)1900(Typ)
Typical Gate Charge @ 10V (nC)3.7
Typical Gate Charge @ Vgs (nC)3.7@10V|1.8@4.5V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)5
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)15
Maximum Gate Threshold Voltage (V)2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8.1
Typical Input Capacitance @ Vds (pF)270@15V
Maximum Drain Source Resistance (mOhm)18@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 8.1A 8-Pin WISON EP T/R
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