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BSZ100N06NS
BSZ100N06NS
MOSFETs BSZ100N06NS
Infineon
BSZ100N06NS
--
Diodes, Transistors and Thyristors
MOSFETs
BSZ100N06NS.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.3
Package Height1
Package Length3.3
Product CategoryPower MOSFET
Supplier PackageTSDSON EP
Maximum IDSS (uA)1
Process TechnologyOptiMOS
Standard Package NameSON
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)2
Typical Rise Time (ns)2
Number of Elements per Chip1
Maximum Power Dissipation (mW)2100
Typical Gate Charge @ 10V (nC)12
Typical Gate Charge @ Vgs (nC)12@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)6
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)10
Maximum Gate Threshold Voltage (V)3.3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)40
Typical Input Capacitance @ Vds (pF)860@30V
Maximum Drain Source Resistance (MOhm)10@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 60V 40A 8-Pin TSDSON EP T/R
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