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MOSFETs BSZ15DC02KDHXTMA1
Infineon
BSZ15DC02KDHXTMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | Yes |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual Dual Drain |
| Package Width | 3.4(Max) |
| Package Height | 1(Max) |
| Package Length | 3.4(Max) |
| Product Category | Small Signal |
| Supplier Package | TSDSON EP |
| Maximum IDSS (uA) | 0.1 |
| Process Technology | OptiMOS 2|OptiMOS-P 2 |
| Standard Package Name | SON |
| Typical Fall Time (ns) | 1.4@N Channel|4.7@P Channel |
| Typical Rise Time (ns) | 2@N Channel|3.7@P Channel |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Gate Charge @ Vgs (nC) | 2.1@4.5V@N Channel|3@4.5V@P Channel |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Turn-On Delay Time (ns) | 4.9@N Channel|7.4@P Channel |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 12.2@N Channel|11.3@P Channel |
| Maximum Gate Threshold Voltage (V) | 1.4@N Channel|0.7@P Channel |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5.1@N Channel|3.2@P Channel |
| Typical Input Capacitance @ Vds (pF) | 315@10V@N Channel|270@10V@P Channel |
| Maximum Drain Source Resistance (MOhm) | 55@4.5V@N Channel|150@4.5V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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