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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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BSZ215CHXTMA1
BSZ215CHXTMA1
MOSFETs BSZ215CHXTMA1
Infineon
BSZ215CHXTMA1
--
Diodes, Transistors and Thyristors
MOSFETs
BSZ215CHXTMA1.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveYes
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Drain
Package Width3.3
Package Height1
Package Length3.3
Product CategorySmall Signal
Supplier PackageTSDSON EP
Maximum IDSS (uA)0.1
Process TechnologyOptiMOS 2|OptiMOS P
Typical Fall Time (ns)1.4@N Channel|4.7@P Channel
Typical Rise Time (ns)2@N Channel|3.7@P Channel
Supplier Temperature GradeAutomotive
Number of Elements per Chip2
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)2.1@4.5V@N Channel|3@4.5V@P Channel
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)4.9@N Channel|7.4@P Channel
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)12.2@N Channel|11.3@P Channel
Maximum Gate Threshold Voltage (V)1.4@P Channel|0.7@N Channel
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.2@P Channel|5.1@N Channel
Typical Input Capacitance @ Vds (pF)310@10V@N Channel|300@10V@P Channel
Maximum Drain Source Resistance (MOhm)55@4.5V@N Channel|150@4.5V@P Channel
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N/P-CH 20V 5.1A/3.2A Automotive 8-Pin TSDSON EP T/R
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