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BUK6D56-60EX
BUK6D56-60EX
MOSFETs BUK6D56-60EX
Nexperia
BUK6D56-60EX
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Diodes, Transistors and Thyristors
MOSFETs
BUK6D56-60EX.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveYes
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain
Package Width2.1(Max)
Package Height0.61(Max)
Package Length2.1(Max)
Product CategoryPower MOSFET
Supplier PackageDFN-MD EP
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameDFN
Typical Fall Time (ns)7
Typical Rise Time (ns)4
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)7.5
Typical Gate Charge @ Vgs (nC)7.5@10V
Maximum Gate Source Voltage (V)20
Typical Output Capacitance (pF)47
Typical Turn-On Delay Time (ns)4.5
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)2.5
Typical Turn-Off Delay Time (ns)13.5
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.8
Typical Gate to Drain Charge (nC)1.2
Maximum Gate Threshold Voltage (V)2.7
Minimum Gate Threshold Voltage (V)1.3
Typical Gate Threshold Voltage (V)1.7
Typical Gate to Source Charge (nC)1
Typical Reverse Recovery Time (ns)13
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)435@30V
Typical Reverse Recovery Charge (nC)6
Maximum Drain Source Resistance (mOhm)56@10V
Maximum Gate Source Leakage Current (nA)10000
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)44
Maximum Power Dissipation on PCB @ TC=25°C (W)2
Typical Reverse Transfer Capacitance @ Vds (pF)26@30V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)4
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)76
Description
Trans MOSFET N-CH 60V 4A Automotive 6-Pin DFN-MD EP T/R
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