Product Attribute | Attribute Value |
HTS | 8541.29.00.95 |
PPAP | Unknown |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Pin Count | 8 |
Automotive | Yes |
PCB changed | 8 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Dual |
Package Width | 4.7(Max) |
Package Height | 1.05(Max) |
Package Length | 5.3(Max) |
Product Category | Power MOSFET |
Supplier Package | LFPAK-D |
Maximum IDSS (uA) | 5 |
Process Technology | TMOS |
Typical Fall Time (ns) | 6.5 |
Typical Rise Time (ns) | 8.1 |
Supplier Temperature Grade | Automotive |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 46000 |
Typical Gate Charge @ 10V (nC) | 13.9 |
Typical Gate Charge @ Vgs (nC) | 13.9@10V|7.3@5V |
Maximum Gate Source Voltage (V) | 20 |
Typical Turn-On Delay Time (ns) | 5.6 |
Maximum Drain Source Voltage (V) | 40 |
Typical Turn-Off Delay Time (ns) | 9.1 |
Maximum Gate Threshold Voltage (V) | 2.2 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 42 |
Typical Input Capacitance @ Vds (pF) | 829@25V |
Maximum Drain Source Resistance (mOhm) | 13.6@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |