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BUZ11A
BUZ11A
MOSFETs BUZ11A
STMicroelectronics
BUZ11A
--
Diodes, Transistors and Thyristors
MOSFETs
BUZ11A.pdf
Specification
Product AttributeAttribute Value
TabTab
EU RoHSSupplier Unconfirmed
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveUnknown
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.6(Max)
Package Height9.15(Max)
Package Length10.4(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Standard Package NameTO-220
Typical Fall Time (ns)20
Typical Rise Time (ns)95
Number of Elements per Chip1
Maximum Power Dissipation (mW)75000
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)50
Typical Turn-Off Delay Time (ns)50
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)26
Typical Input Capacitance @ Vds (pF)1400@25V
Maximum Drain Source Resistance (mOhm)55@10V
Description
Trans MOSFET N-CH Si 50V 26A 3-Pin(3+Tab) TO-220AB
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