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BUZ11R4941
BUZ11R4941
MOSFETs BUZ11R4941
onsemi
BUZ11R4941
--
Diodes, Transistors and Thyristors
MOSFETs
BUZ11R4941.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
TabTab
PPAPNo
EU RoHSSupplier Unconfirmed
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.57(Max)
Package Height9.02(Max)
Package Length10.28(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Standard Package NameTO-220
Typical Fall Time (ns)130
Typical Rise Time (ns)70
Number of Elements per Chip1
Maximum Power Dissipation (mW)75000
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)30
Maximum Drain Source Voltage (V)50
Typical Turn-Off Delay Time (ns)180
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)30
Typical Input Capacitance @ Vds (pF)1500@25V
Maximum Drain Source Resistance (mOhm)40@10V
Description
Trans MOSFET N-CH Si 50V 30A 3-Pin(3+Tab) TO-220AB
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