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BUZ32H3045AATMA1
BUZ32H3045AATMA1
MOSFETs BUZ32H3045AATMA1
Infineon
BUZ32H3045AATMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.45(Max)
Package Height4.57(Max)
Package Length10.31(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologySIPMOS
Standard Package NameTO-263
Typical Fall Time (ns)30
Typical Rise Time (ns)40
Number of Elements per Chip1
Maximum Power Dissipation (mW)75000
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)55
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9.5
Typical Input Capacitance @ Vds (pF)400@25V
Maximum Drain Source Resistance (MOhm)400@10V
Description
Trans MOSFET N-CH 200V 9.5A 3-Pin(2+Tab) D2PAK T/R
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