Product Attribute | Attribute Value |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Product Category | Power MOSFET |
Process Technology | SIPMOS |
Typical Fall Time (ns) | 30 |
Typical Rise Time (ns) | 40 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 40000 |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 85 |
Typical Turn-On Delay Time (ns) | 10 |
Maximum Drain Source Voltage (V) | 200 |
Typical Turn-Off Delay Time (ns) | 55 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 7 |
Typical Input Capacitance @ Vds (pF) | 400@25V |
Typical Reverse Recovery Charge (nC) | 600 |
Maximum Drain Source Resistance (MOhm) | 400@10V |
Description |