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BVSS84LT1G
BVSS84LT1G
MOSFETs BVSS84LT1G
onsemi
BVSS84LT1G
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Diodes, Transistors and Thyristors
MOSFETs
BVSS84LT1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Product CategoryPower MOSFET
Supplier PackageSOT-23
Maximum IDSS (uA)15
Process TechnologyTMOS
Standard Package NameSOT
Typical Fall Time (ns)1.7
Typical Rise Time (ns)9.7
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)225
Typical Gate Charge @ 10V (nC)2.2
Typical Gate Charge @ Vgs (nC)2.2@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)17
Typical Turn-On Delay Time (ns)3.6
Maximum Drain Source Voltage (V)50
Typical Gate Plateau Voltage (V)3.5
Typical Turn-Off Delay Time (ns)12
Maximum Diode Forward Voltage (V)2.2
Maximum Gate Threshold Voltage (V)2
Minimum Gate Threshold Voltage (V)0.9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.13
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)36@5V
Maximum Drain Source Resistance (mOhm)10000@5V
Maximum Gate Source Leakage Current (nA)10
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)0.52
Typical Reverse Transfer Capacitance @ Vds (pF)6.5@5V
Description
Trans MOSFET P-CH 50V 0.13A Automotive 3-Pin SOT-23 T/R
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