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CSD16323Q3C
CSD16323Q3C
MOSFETs CSD16323Q3C
Texas Instruments
CSD16323Q3C
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusObsolete
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.3
Package Height1
Package Length3.3
Product CategoryPower MOSFET
Supplier PackageSON EP
Process TechnologyNexFET
Standard Package NameSON
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)6.3
Typical Rise Time (ns)15
Number of Elements per Chip1
Maximum Power Dissipation (mW)3000
Typical Gate Charge @ Vgs (nC)6.2@4.5V
Maximum Gate Source Voltage (V)10
Typical Turn-On Delay Time (ns)5.3
Maximum Drain Source Voltage (V)25
Typical Turn-Off Delay Time (ns)13
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)21
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)1020@12.5V
Maximum Drain Source Resistance (mOhm)4.5@8V
Description
Trans MOSFET N-CH 25V 21A 8-Pin SON EP T/R
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