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MOSFETs CSD16325Q5
Texas Instruments
CSD16325Q5
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 6.1(Max) |
| Package Height | 1.05(Max) |
| Package Length | 5.1(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SON EP |
| Process Technology | NexFET |
| Standard Package Name | SON |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 12 |
| Typical Rise Time (ns) | 16 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3100 |
| Typical Gate Charge @ Vgs (nC) | 18@4.5V |
| Maximum Gate Source Voltage (V) | 10 |
| Typical Output Capacitance (pF) | 2190 |
| Typical Turn-On Delay Time (ns) | 10.5 |
| Maximum Drain Source Voltage (V) | 25 |
| Typical Turn-Off Delay Time (ns) | 32 |
| Typical Gate to Drain Charge (nC) | 3.5 |
| Maximum Gate Threshold Voltage (V) | 1.4 |
| Typical Gate Threshold Voltage (V) | 1.1 |
| Typical Gate to Source Charge (nC) | 6.6 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 33 |
| Typical Input Capacitance @ Vds (pF) | 3070@12.5V |
| Typical Reverse Recovery Charge (nC) | 63 |
| Maximum Drain Source Resistance (MOhm) | 2@8V |
| Description |
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