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CSD16340Q3T
CSD16340Q3T
MOSFETs CSD16340Q3T
Texas Instruments
CSD16340Q3T
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.3
Package Height1
Package Length3.3
Product CategoryPower MOSFET
Supplier PackageVSON-CLIP EP
Maximum IDSS (uA)1
Process TechnologyNexFET
Standard Package NameSON
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)5.2
Typical Rise Time (ns)16.1
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)3
Maximum Power Dissipation (mW)3000
Typical Gate Charge @ Vgs (nC)6.5@4.5V
Maximum Gate Source Voltage (V)10
Typical Output Capacitance (pF)730
Typical Turn-On Delay Time (ns)4.8
Maximum Drain Source Voltage (V)25
Typical Gate Plateau Voltage (V)2
Typical Turn-Off Delay Time (ns)13.8
Maximum Diode Forward Voltage (V)1
Typical Diode Forward Voltage (V)0.8
Typical Gate to Drain Charge (nC)1.2
Maximum Gate Threshold Voltage (V)1.1
Minimum Gate Threshold Voltage (V)0.6
Typical Gate Threshold Voltage (V)0.85
Typical Gate to Source Charge (nC)2.1
Typical Reverse Recovery Time (ns)20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)21
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)1050@12.5V
Typical Reverse Recovery Charge (nC)14.5
Maximum Drain Source Resistance (mOhm)4.5@8V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)10
Maximum Pulsed Drain Current @ TC=25°C (A)115
Maximum Power Dissipation on PCB @ TC=25°C (W)3
Typical Reverse Transfer Capacitance @ Vds (pF)53@12.5V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)21
Description
Trans MOSFET N-CH 25V 21A 8-Pin VSON-CLIP EP T/R
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