PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
Lead Shape | No Lead |
PCB changed | 8 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Triple Source |
Package Width | 3.3 |
Package Height | 1 |
Package Length | 3.3 |
Product Category | Power MOSFET |
Supplier Package | VSON-CLIP EP |
Maximum IDSS (uA) | 1 |
Process Technology | NexFET |
Standard Package Name | SON |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 5.2 |
Typical Rise Time (ns) | 16.1 |
Number of Elements per Chip | 1 |
Maximum Gate Resistance (Ohm) | 3 |
Maximum Power Dissipation (mW) | 3000 |
Typical Gate Charge @ Vgs (nC) | 6.5@4.5V |
Maximum Gate Source Voltage (V) | 10 |
Typical Output Capacitance (pF) | 730 |
Typical Turn-On Delay Time (ns) | 4.8 |
Maximum Drain Source Voltage (V) | 25 |
Typical Gate Plateau Voltage (V) | 2 |
Typical Turn-Off Delay Time (ns) | 13.8 |
Maximum Diode Forward Voltage (V) | 1 |
Typical Diode Forward Voltage (V) | 0.8 |
Typical Gate to Drain Charge (nC) | 1.2 |
Maximum Gate Threshold Voltage (V) | 1.1 |
Minimum Gate Threshold Voltage (V) | 0.6 |
Typical Gate Threshold Voltage (V) | 0.85 |
Typical Gate to Source Charge (nC) | 2.1 |
Typical Reverse Recovery Time (ns) | 20 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 21 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 1050@12.5V |
Typical Reverse Recovery Charge (nC) | 14.5 |
Maximum Drain Source Resistance (mOhm) | 4.5@8V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 10 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 115 |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 3 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 53@12.5V |
Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 21 |
Description | |