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CSD16411Q3
CSD16411Q3
MOSFETs CSD16411Q3
Texas Instruments
CSD16411Q3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.3
Package Height1
Package Length3.3
Product CategoryPower MOSFET
Supplier PackageVSON-CLIP EP
Process TechnologyNexFET
Standard Package NameSON
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)3.1
Typical Rise Time (ns)7.8
Number of Elements per Chip1
Maximum Power Dissipation (mW)2870
Typical Gate Charge @ Vgs (nC)2.9@4.5V
Maximum Gate Source Voltage (V)16
Typical Output Capacitance (pF)330
Typical Turn-On Delay Time (ns)5.3
Maximum Drain Source Voltage (V)25
Typical Turn-Off Delay Time (ns)6
Typical Gate to Drain Charge (nC)0.7
Maximum Gate Threshold Voltage (V)2.3
Typical Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)1.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)14
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)440@12.5V
Typical Reverse Recovery Charge (nC)11.7
Maximum Drain Source Resistance (mOhm)10@10V
Description
Trans MOSFET N-CH Si 25V 14A 8-Pin VSON-CLIP EP T/R
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