Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant with Exemption |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
PCB changed | 8 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Triple Source |
Package Width | 5.75 |
Package Height | 1 |
Package Length | 4.9 |
Product Category | Power MOSFET |
Supplier Package | VSONP EP |
Maximum IDSS (uA) | 1 |
Process Technology | NexFET |
Typical Fall Time (ns) | 4 |
Typical Rise Time (ns) | 12 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 3100 |
Typical Gate Charge @ 10V (nC) | 47 |
Typical Gate Charge @ Vgs (nC) | 47@10V|23@4.5V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 6 |
Maximum Drain Source Voltage (V) | 40 |
Typical Turn-Off Delay Time (ns) | 21 |
Typical Gate to Drain Charge (nC) | 8.8 |
Maximum Gate Threshold Voltage (V) | 2.4 |
Typical Gate Threshold Voltage (V) | 1.8 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 100 |
Typical Input Capacitance @ Vds (pF) | 3300@20V |
Maximum Drain Source Resistance (mOhm) | 3.4@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |