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CSD18532Q5B
CSD18532Q5B
MOSFETs CSD18532Q5B
Texas Instruments
CSD18532Q5B
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width6
Package Height1
Package Length5
Product CategoryPower MOSFET
Supplier PackageVSON-CLIP EP
Maximum IDSS (uA)1
Process TechnologyNexFET
Standard Package NameSON
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)3.1
Typical Rise Time (ns)7.2
Number of Elements per Chip1
Maximum Power Dissipation (mW)3200
Typical Gate Charge @ 10V (nC)44
Typical Gate Charge @ Vgs (nC)44@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)5.8
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)22
Typical Gate to Drain Charge (nC)6.9
Maximum Gate Threshold Voltage (V)2.2
Typical Gate Threshold Voltage (V)1.8
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)100
Typical Input Capacitance @ Vds (pF)3900@30V
Maximum Drain Source Resistance (mOhm)3.2@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 60V 100A 8-Pin VSON-CLIP EP T/R
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