Product Attribute | Attribute Value |
Tab | Tab |
PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 4 |
Automotive | No |
Lead Shape | Gull-wing |
PCB changed | 3 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 9.65(Max) |
Package Height | 4.83(Max) |
Package Length | 10.67(Max) |
Product Category | Power MOSFET |
Supplier Package | DDPAK |
Maximum IDSS (uA) | 1 |
Process Technology | NexFET |
Standard Package Name | TO-263 |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 21 |
Typical Rise Time (ns) | 5 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 250000 |
Typical Gate Charge @ 10V (nC) | 44 |
Typical Gate Charge @ Vgs (nC) | 21@4.5V|44@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 6 |
Maximum Drain Source Voltage (V) | 60 |
Typical Turn-Off Delay Time (ns) | 18 |
Typical Gate to Drain Charge (nC) | 6.9 |
Maximum Gate Threshold Voltage (V) | 2.2 |
Typical Gate Threshold Voltage (V) | 1.8 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 200 |
Typical Input Capacitance @ Vds (pF) | 3900@30V |
Maximum Drain Source Resistance (mOhm) | 4@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |