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MOSFETs CSD19533KCS
Texas Instruments
CSD19533KCS
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 4.7(Max) |
| Package Height | 9.25(Max) |
| Package Length | 10.36(Max) |
| Product Category | Power MOSFET |
| Supplier Package | TO-220 |
| Maximum IDSS (uA) | 1 |
| Process Technology | NexFET |
| Standard Package Name | TO-220 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 2 |
| Typical Rise Time (ns) | 5 |
| Number of Elements per Chip | 1 |
| Maximum Gate Resistance (Ohm) | 2.4 |
| Maximum Power Dissipation (mW) | 188000 |
| Typical Gate Charge @ 10V (nC) | 27 |
| Typical Gate Charge @ Vgs (nC) | 27@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 395 |
| Typical Turn-On Delay Time (ns) | 7 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Gate Plateau Voltage (V) | 4.4 |
| Typical Turn-Off Delay Time (ns) | 12 |
| Maximum Diode Forward Voltage (V) | 1.1 |
| Typical Diode Forward Voltage (V) | 0.9 |
| Typical Gate to Drain Charge (nC) | 5.4 |
| Maximum Gate Threshold Voltage (V) | 3.4 |
| Minimum Gate Threshold Voltage (V) | 2.2 |
| Typical Gate Threshold Voltage (V) | 2.8 |
| Typical Gate to Source Charge (nC) | 9 |
| Typical Reverse Recovery Time (ns) | 77 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 100 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 2050@50V |
| Typical Reverse Recovery Charge (nC) | 211 |
| Maximum Drain Source Resistance (mOhm) | 10.5@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 207 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 9.6@50V |
| Description |
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