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CSD19538Q3A
CSD19538Q3A
MOSFETs CSD19538Q3A
Texas Instruments
CSD19538Q3A
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.1(Max)
Package Height0.85(Max)
Package Length3.25(Max)
Product CategoryPower MOSFET
Supplier PackageVSONP EP
Maximum IDSS (uA)1
Standard Package NameSON
Typical Fall Time (ns)2
Typical Rise Time (ns)3
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)9.2
Maximum Power Dissipation (mW)2800
Typical Gate Charge @ 10V (nC)4.3
Typical Gate Charge @ Vgs (nC)4.3@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)69
Typical Turn-On Delay Time (ns)5
Maximum Drain Source Voltage (V)100
Typical Gate Plateau Voltage (V)4.9
Typical Turn-Off Delay Time (ns)7
Maximum Diode Forward Voltage (V)1
Typical Diode Forward Voltage (V)0.85
Typical Gate to Drain Charge (nC)0.8
Maximum Gate Threshold Voltage (V)3.8
Minimum Gate Threshold Voltage (V)2.8
Typical Gate Threshold Voltage (V)3.2
Typical Gate to Source Charge (nC)1.6
Typical Reverse Recovery Time (ns)32
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)15
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)349@50V
Typical Reverse Recovery Charge (nC)94
Maximum Drain Source Resistance (mOhm)59@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)37
Typical Reverse Transfer Capacitance @ Vds (pF)12.6@50V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)4.9
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)55
Description
Trans MOSFET N-CH Si 100V 15A 8-Pin VSONP EP T/R
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