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CSD22202W15
CSD22202W15
MOSFETs CSD22202W15
Texas Instruments
CSD22202W15
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count9
AutomotiveNo
Lead ShapeBall
PCB changed9
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Triple Drain Quint Source
Package Width1.5
Package Height0.28(Max)
Package Length1.5
Product CategoryPower MOSFET
Supplier PackageDSBGA
Maximum IDSS (uA)1
Process TechnologyNexFET
Standard Package NameBGA
Typical Fall Time (ns)38
Typical Rise Time (ns)8.4
Number of Elements per Chip1
Maximum Power Dissipation (mW)1500
Typical Gate Charge @ Vgs (nC)6.5@4.5V
Maximum Gate Source Voltage (V)-6
Typical Turn-On Delay Time (ns)10.4
Maximum Drain Source Voltage (V)8
Typical Turn-Off Delay Time (ns)109
Typical Gate to Drain Charge (nC)1
Maximum Gate Threshold Voltage (V)1.1
Typical Gate Threshold Voltage (V)0.8
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)10
Typical Input Capacitance @ Vds (pF)1060@4V
Maximum Drain Source Resistance (mOhm)12.2@4.5V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH Si 8V 10A 9-Pin DSBGA T/R
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