Product Attribute | Attribute Value |
PPAP | No |
SVHC | Yes |
EU RoHS | Compliant |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 9 |
Automotive | No |
Lead Shape | Ball |
PCB changed | 9 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single Triple Drain Quint Source |
Package Width | 1.5 |
Package Height | 0.28(Max) |
Package Length | 1.5 |
Product Category | Power MOSFET |
Supplier Package | DSBGA |
Maximum IDSS (uA) | 1 |
Process Technology | NexFET |
Standard Package Name | BGA |
Typical Fall Time (ns) | 38 |
Typical Rise Time (ns) | 8.4 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 1500 |
Typical Gate Charge @ Vgs (nC) | 6.5@4.5V |
Maximum Gate Source Voltage (V) | -6 |
Typical Turn-On Delay Time (ns) | 10.4 |
Maximum Drain Source Voltage (V) | 8 |
Typical Turn-Off Delay Time (ns) | 109 |
Typical Gate to Drain Charge (nC) | 1 |
Maximum Gate Threshold Voltage (V) | 1.1 |
Typical Gate Threshold Voltage (V) | 0.8 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 10 |
Typical Input Capacitance @ Vds (pF) | 1060@4V |
Maximum Drain Source Resistance (mOhm) | 12.2@4.5V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |