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MOSFETs CSD22205L
Texas Instruments
CSD22205L
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Dual Drain |
| Product Category | Power MOSFET |
| Typical Fall Time (ns) | 32 |
| Typical Rise Time (ns) | 14 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 600 |
| Typical Gate Charge @ Vgs (nC) | 6.5@4.5V |
| Maximum Gate Source Voltage (V) | -6 |
| Typical Turn-On Delay Time (ns) | 30 |
| Maximum Drain Source Voltage (V) | 8 |
| Typical Turn-Off Delay Time (ns) | 70 |
| Typical Gate to Drain Charge (nC) | 1 |
| Typical Gate Threshold Voltage (V) | 0.7 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 7.4 |
| Typical Input Capacitance @ Vds (pF) | 1070@4V |
| Maximum Drain Source Resistance (MOhm) | 9.9@4.5V |
| Description |
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