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CSD25202W15
CSD25202W15
MOSFETs CSD25202W15
Texas Instruments
CSD25202W15
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count9
AutomotiveNo
Lead ShapeBall
PCB changed9
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Quad Source
Package Width1.5
Package Height0.28(Max)
Package Length1.5
Product CategoryPower MOSFET
Supplier PackageDSBGA
Maximum IDSS (uA)1
Process TechnologyNexFET
Standard Package NameBGA
Typical Fall Time (ns)28
Typical Rise Time (ns)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Typical Gate Charge @ Vgs (nC)5.8@4.5V
Maximum Gate Source Voltage (V)-6
Typical Output Capacitance (pF)400
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)20
Typical Gate Plateau Voltage (V)1.4
Typical Turn-Off Delay Time (ns)64
Maximum Diode Forward Voltage (V)1
Typical Diode Forward Voltage (V)0.75
Typical Gate to Drain Charge (nC)0.8
Maximum Gate Threshold Voltage (V)1.05
Minimum Gate Threshold Voltage (V)0.45
Typical Gate Threshold Voltage (V)0.75
Typical Gate to Source Charge (nC)1.1
Typical Reverse Recovery Time (ns)26
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)778@10V
Typical Reverse Recovery Charge (nC)19
Maximum Drain Source Resistance (MOhm)26@4.5V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)6
Maximum Pulsed Drain Current @ TC=25°C (A)38
Typical Reverse Transfer Capacitance @ Vds (pF)21@10V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)220(Typ)
Description
Trans MOSFET P-CH 20V 4A 9-Pin DSBGA T/R
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