PPAP | No |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 9 |
Automotive | No |
Lead Shape | Ball |
PCB changed | 9 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single Quad Drain Quad Source |
Package Width | 1.5 |
Package Height | 0.28(Max) |
Package Length | 1.5 |
Product Category | Power MOSFET |
Supplier Package | DSBGA |
Maximum IDSS (uA) | 1 |
Process Technology | NexFET |
Standard Package Name | BGA |
Typical Fall Time (ns) | 28 |
Typical Rise Time (ns) | 12 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 500 |
Typical Gate Charge @ Vgs (nC) | 5.8@4.5V |
Maximum Gate Source Voltage (V) | -6 |
Typical Output Capacitance (pF) | 400 |
Typical Turn-On Delay Time (ns) | 15 |
Maximum Drain Source Voltage (V) | 20 |
Typical Gate Plateau Voltage (V) | 1.4 |
Typical Turn-Off Delay Time (ns) | 64 |
Maximum Diode Forward Voltage (V) | 1 |
Typical Diode Forward Voltage (V) | 0.75 |
Typical Gate to Drain Charge (nC) | 0.8 |
Maximum Gate Threshold Voltage (V) | 1.05 |
Minimum Gate Threshold Voltage (V) | 0.45 |
Typical Gate Threshold Voltage (V) | 0.75 |
Typical Gate to Source Charge (nC) | 1.1 |
Typical Reverse Recovery Time (ns) | 26 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 4 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 778@10V |
Typical Reverse Recovery Charge (nC) | 19 |
Maximum Drain Source Resistance (MOhm) | 26@4.5V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 6 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 38 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 21@10V |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 220(Typ) |
Description | |