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MOSFETs DMC1030UFDBQ-13
Diodes Incorporated
DMC1030UFDBQ-13
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Yes |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | Yes |
| Lead Shape | No Lead |
| PCB changed | 6 |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual |
| Package Width | 2 |
| Package Height | 0.56 |
| Package Length | 2 |
| Product Category | Power MOSFET |
| Supplier Package | UDFN EP |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | DFN |
| Typical Fall Time (ns) | 4.9@N Channel|25.4@P Channel |
| Typical Rise Time (ns) | 7.4@N Channel|12.8@P Channel |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1890 |
| Typical Gate Charge @ Vgs (nC) | 12.2@4.5V|20.8@8V@P Channel|23.1@8V@N Channel|13@4.5V |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Turn-On Delay Time (ns) | 4.4@N Channel|5.6@P Channel |
| Maximum Drain Source Voltage (V) | 12 |
| Typical Turn-Off Delay Time (ns) | 18.8@N Channel|30.7@P Channel |
| Maximum Gate Threshold Voltage (V) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5.1@N Channel|3.9@P Channel |
| Typical Input Capacitance @ Vds (pF) | 1003@6V@N Channel|1028@6V@P Channel |
| Maximum Drain Source Resistance (mOhm) | 34@4.5V@N Channel|59@4.5V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Description |
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