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DMC10H220LSD-13
DMC10H220LSD-13
MOSFETs DMC10H220LSD-13
Diodes Incorporated
DMC10H220LSD-13
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count8
AutomotiveNo
PCB changed8
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Drain
Package Width3.9
Package Height1.45
Package Length4.9
Product CategoryPower MOSFET
Supplier PackageSO
Typical Fall Time (ns)3.6@N Channel|34.4@P Channel
Typical Rise Time (ns)8.2@N Channel|14.9@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)1500
Typical Gate Charge @ 10V (nC)8.3@N Channel|17.5@P Channel
Typical Gate Charge @ Vgs (nC)4.1@4.5V|8.3@10V@N Channel|8.4@4.5V|17.5@10V@P Channel
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)6.8@N Channel|9.1@P Channel
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)7.9@N Channel|57.4@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.7
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)340@50V@N Channel|1030@50V@P Channel
Maximum Drain Source Resistance (mOhm)220@10V@N Channel|250@10V@P Channel
Description
Trans MOSFET N/P-CH 100V 1.7A 8-Pin SO T/R
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