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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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DMC2025UFDB-7
DMC2025UFDB-7
MOSFETs DMC2025UFDB-7
Diodes Incorporated
DMC2025UFDB-7
--
Diodes, Transistors and Thyristors
MOSFETs
DMC2025UFDB-7.pdf
Specification
Product AttributeAttribute Value
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
Lead ShapeNo Lead
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP|N
ConfigurationDual Dual Drain
Package Width2
Package Height0.56
Package Length2
Product CategoryPower MOSFET
Supplier PackageUDFN EP
Maximum IDSS (uA)1
Standard Package NameDFN
Typical Fall Time (ns)34.3@P Channel|9.3@N Channel
Typical Rise Time (ns)22.6@P Channel|5.4@N Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)1400
Typical Gate Charge @ 10V (nC)12.3@N Channel
Typical Gate Charge @ Vgs (nC)15@8V@P Channel|8.8@4.5V|12.3@10V@N Channel|5.9@4.5V
Maximum Gate Source Voltage (V)±3.5@P Channel|±10@N Channel
Typical Turn-On Delay Time (ns)5.5@P Channel|3.4@N Channel
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)34.1@P Channel|17.6@N Channel
Maximum Gate Threshold Voltage (V)1.4@P Channel|1@N Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.5@P Channel|6@N Channel
Typical Input Capacitance @ Vds (pF)642@10V@P Channel|486@10V@N Channel
Maximum Drain Source Resistance (mOhm)75@4.5V@P Channel|25@4.5V@N Channel
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N/P-CH 20V 6A/3.5A 6-Pin UDFN EP T/R
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