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MOSFETs DMC2038LVT-7
Diodes Incorporated
DMC2038LVT-7
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | P|N |
| Configuration | Dual |
| Package Width | 1.6 |
| Package Height | 0.9(Max) |
| Package Length | 2.9 |
| Product Category | Power MOSFET |
| Supplier Package | TSOT-26 |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 13@P Channel|8@N Channel |
| Typical Rise Time (ns) | 12@P Channel|8@N Channel |
| Supplier Temperature Grade | Commercial |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1100 |
| Typical Gate Charge @ 10V (nC) | 14@P Channel|12@N Channel |
| Typical Gate Charge @ Vgs (nC) | 7@4.5V@P Channel|14@10V|5.7@4.5V@N Channel|12@10V |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Turn-On Delay Time (ns) | 11@P Channel|5@N Channel |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 12@P Channel|25@N Channel |
| Maximum Gate Threshold Voltage (V) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.1@P Channel|4.5@N Channel |
| Typical Input Capacitance @ Vds (pF) | 530@10V@P Channel|400@10V@N Channel |
| Maximum Drain Source Resistance (mOhm) | 74@4.5V@P Channel|35@4.5V@N Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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