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MOSFETs DMC25D0UVT-7
Diodes Incorporated
DMC25D0UVT-7
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual |
| Package Width | 1.6 |
| Package Height | 0.9(Max) |
| Package Length | 2.9 |
| Product Category | Power MOSFET |
| Supplier Package | TSOT-26 |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 3.7@Q 1|14.6@Q 2 |
| Typical Rise Time (ns) | 2.3@Q 1|3.3@Q 2 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1200 |
| Typical Gate Charge @ 10V (nC) | 21@Q 2 |
| Typical Gate Charge @ Vgs (nC) | 0.7@8V|0.4@4.5V@Q 1|21@10V|10@4.5V@Q 2 |
| Maximum Gate Source Voltage (V) | 8@Q 1|±12@Q 2 |
| Typical Turn-On Delay Time (ns) | 3@Q 1|3.5@Q 2 |
| Maximum Drain Source Voltage (V) | 25@Q 1|30@Q 2 |
| Typical Turn-Off Delay Time (ns) | 7.7@Q 1|61.4@Q 2 |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.4@N Channel|3.2@P Channel |
| Typical Input Capacitance @ Vds (pF) | 26.2@10V@Q 1|854@15V@Q 2 |
| Maximum Drain Source Resistance (MOhm) | 4000@4.5V@N Channel|80@12V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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