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MOSFETs DMC3021LK4-13
Diodes Incorporated
DMC3021LK4-13
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 5 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 4 |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | P|N |
| Configuration | Dual |
| Package Width | 6.1 |
| Package Height | 2.29 |
| Package Length | 6.58 |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | TO-252 |
| Typical Fall Time (ns) | 6.3@Q 1|22.2@Q 2 |
| Typical Rise Time (ns) | 6.6@Q 1|6.5@Q 2 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2700 |
| Typical Gate Charge @ 10V (nC) | 17.4@Q 1|21.1@Q 2 |
| Typical Gate Charge @ Vgs (nC) | 9@4.5V|17.4@10V@Q 1|10.1@4.5V|21.1@10V@Q 2 |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 2.5@Q 1|10.1@Q 2 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 19@Q 1|50.1@Q 2 |
| Maximum Gate Threshold Voltage (V) | 2.1@Q 1|2.2@Q 2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 9.4@N Channel|6.8@P Channel |
| Typical Input Capacitance @ Vds (pF) | 751@10V@Q 1|1039@10V@Q 2 |
| Maximum Drain Source Resistance (mOhm) | 21@10V@N Channel|39@10V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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