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MOSFETs DMC3025LSD-13
Diodes Incorporated
DMC3025LSD-13
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual Dual Drain |
| Package Width | 3.9 |
| Package Height | 1.45 |
| Package Length | 4.9 |
| Product Category | Power MOSFET |
| Supplier Package | SO |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 12.4@P Channel|5.8@N Channel |
| Typical Rise Time (ns) | 4.9@P Channel|4.2@N Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1500 |
| Typical Gate Charge @ 10V (nC) | 10.5@P Channel|9.8@N Channel |
| Typical Gate Charge @ Vgs (nC) | 5.1@4.5V@P Channel|10.5@10V|4.6@4.5V@N Channel|9.8@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 6.8@P Channel|3.9@N Channel |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 28.4@P Channel|16.6@N Channel |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 6.5@N Channel|4.2@P Channel |
| Typical Input Capacitance @ Vds (pF) | 590@25V@P Channel|501@15V@N Channel |
| Maximum Drain Source Resistance (mOhm) | 20@10V@N Channel|45@10V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 100@P Channel|1000@N Channel |
| Description |
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