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MOSFETs DMC3026LSD-13
Diodes Incorporated
DMC3026LSD-13
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual Dual Drain |
| Package Width | 3.9 |
| Package Height | 1.45 |
| Package Length | 4.9 |
| Product Category | Power MOSFET |
| Supplier Package | SO |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 5.3@Q 1|40.4@Q 2 |
| Typical Rise Time (ns) | 4.4@Q 1|17.1@Q 2 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1600 |
| Typical Gate Charge @ 10V (nC) | 13.2@Q 1|22@Q 2 |
| Typical Gate Charge @ Vgs (nC) | 6@4.5V|13.2@10V@Q 1|10.9@4.5V|22@10V@Q 2 |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 3.3@Q 1|9.7@Q 2 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 22.3@Q 1|60.5@Q 2 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 6.5@N Channel|6.2@P Channel |
| Typical Input Capacitance @ Vds (pF) | 641@15V@Q 1|1241@15V@Q 2 |
| Maximum Drain Source Resistance (MOhm) | 25@10V@Q 1|28@10V@Q 2 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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