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MOSFETs DMC3061SVT-13
Diodes Incorporated
DMC3061SVT-13
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual |
| Product Category | Power MOSFET |
| Typical Fall Time (ns) | 51@Q1|21.8@Q2 |
| Typical Rise Time (ns) | 97@Q1|17.9@Q2 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1080 |
| Typical Gate Charge @ Vgs (nC) | 6.6@10V|3.5@4.5V@Q1|6.8@10V|3.5@4.5V@Q2 |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 5.7@Q1|7.4@Q2 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 12.6@Q1|19.6@Q2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.4@Q1|2.7@Q2 |
| Typical Input Capacitance @ Vds (pF) | 278@15V |
| Maximum Drain Source Resistance (mOhm) | 60@10V@Q 1|95@10V@Q 2 |
| Description |
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