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MOSFETs DMC3061SVT-13
Diodes Incorporated
DMC3061SVT-13
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual
Product CategoryPower MOSFET
Typical Fall Time (ns)51@Q1|21.8@Q2
Typical Rise Time (ns)97@Q1|17.9@Q2
Number of Elements per Chip2
Maximum Power Dissipation (mW)1080
Typical Gate Charge @ Vgs (nC)6.6@10V|3.5@4.5V@Q1|6.8@10V|3.5@4.5V@Q2
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)5.7@Q1|7.4@Q2
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)12.6@Q1|19.6@Q2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.4@Q1|2.7@Q2
Typical Input Capacitance @ Vds (pF)278@15V
Maximum Drain Source Resistance (mOhm)60@10V@Q 1|95@10V@Q 2
Description
Trans MOSFET N/P-CH 30V 3.4A/2.7A T/R
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