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MOSFETs DMG6602SVT-7
Diodes Incorporated
DMG6602SVT-7
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual |
| Package Width | 1.6 |
| Package Height | 0.9(Max) |
| Package Length | 2.9 |
| Product Category | Power MOSFET |
| Supplier Package | TSOT-26 |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 3@Q 1|13@Q 2 |
| Typical Rise Time (ns) | 5@Q 1|7.3@Q 2 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1270 |
| Typical Gate Charge @ 10V (nC) | 9@Q 1|7@Q 2 |
| Typical Gate Charge @ Vgs (nC) | 9@10V|4@4.5V@Q 1|7@10V|4@4.5V@Q 2 |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 3@Q 1|4.8@Q 2 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 13@Q 1|20@Q 2 |
| Maximum Gate Threshold Voltage (V) | 2.3 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.4@N Channel|2.8@P Channel |
| Typical Input Capacitance @ Vds (pF) | 290@15V@Q 1|350@15V@Q 2 |
| Maximum Drain Source Resistance (mOhm) | 60@10V@N Channel|95@10V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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