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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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DMG6602SVTX-7
DMG6602SVTX-7
MOSFETs DMG6602SVTX-7
Diodes Incorporated
DMG6602SVTX-7
--
Diodes, Transistors and Thyristors
MOSFETs
DMG6602SVTX-7.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP|N
ConfigurationDual
Package Width1.6
Package Height0.9(Max)
Package Length2.9
Product CategoryPower MOSFET
Supplier PackageTSOT-26
Typical Fall Time (ns)6.8@P Channel|6@N Channel
Typical Rise Time (ns)3@P Channel|2.5@N Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)1000
Typical Gate Charge @ 10V (nC)7.3
Typical Gate Charge @ Vgs (nC)3.7@4.5V@P Channel|7.8@10V|3.6@4.5V@N Channel|7.3@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)3.3@P Channel|3.6@N Channel
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)14@P Channel|16@N Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.4@N Channel|2.8@P Channel
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)410@15V@P Channel|234@15V@N Channel
Maximum Drain Source Resistance (mOhm)95@10V@P Channel|60@10V@N Channel
Description
Trans MOSFET N/P-CH 30V 3.4A/2.8A 6-Pin TSOT-26 T/R
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