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MOSFETs DMHC10H170SFJ-13
Diodes Incorporated
DMHC10H170SFJ-13
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 12 |
| Automotive | No |
| PCB changed | 12 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Quad |
| Package Width | 4.5 |
| Package Height | 0.78 |
| Package Length | 5 |
| Product Category | Power MOSFET |
| Supplier Package | VDFN EP |
| Maximum IDSS (uA) | 1 |
| Typical Fall Time (ns) | 12.8@N Channel|34.4@P Channel |
| Typical Rise Time (ns) | 11.1@N Channel|14.9@P Channel |
| Number of Elements per Chip | 4 |
| Maximum Power Dissipation (mW) | 2100 |
| Typical Gate Charge @ 10V (nC) | 9.7@N Channel|17.5@P Channel |
| Typical Gate Charge @ Vgs (nC) | 9.7@10V|4.9@4.5V@N Channel|17.5@10V|8.4@4.5V@P Channel |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 10.5@N Channel|9.1@P Channel |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 42.6@N Channel|57.4@P Channel |
| Maximum Gate Threshold Voltage (V) | 3 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 2.9@N Channel|2.3@P Channel |
| Typical Input Capacitance @ Vds (pF) | 1167@25V@N Channel|1239@25V@P Channel |
| Maximum Drain Source Resistance (mOhm) | 160@10V@N Channel|250@10V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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