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MOSFETs DMN2004DWK-7
Diodes Incorporated
DMN2004DWK-7
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 1.3 |
| Package Height | 0.95 |
| Package Length | 2.15 |
| Product Category | Small Signal |
| Supplier Package | SOT-363 |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 10.5 |
| Typical Rise Time (ns) | 7.3 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 200 |
| Typical Gate Charge @ Vgs (nC) | 0.53@4.5V|0.95@8V |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Output Capacitance (pF) | 5.7 |
| Typical Turn-On Delay Time (ns) | 4.1 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 1.4 |
| Typical Turn-Off Delay Time (ns) | 13.8 |
| Maximum Diode Forward Voltage (V) | 1.4 |
| Typical Gate to Drain Charge (nC) | 0.07 |
| Maximum Gate Threshold Voltage (V) | 1 |
| Minimum Gate Threshold Voltage (V) | 0.5 |
| Typical Gate to Source Charge (nC) | 0.08 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Continuous Drain Current (A) | 0.54 |
| Operating Junction Temperature (°C) | -65 to 150 |
| Typical Input Capacitance @ Vds (pF) | 36@16V |
| Maximum Drain Source Resistance (mOhm) | 550@4.5V |
| Maximum Gate Source Leakage Current (nA) | 1000 |
| Maximum Positive Gate Source Voltage (V) | 8 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 1.5 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.2 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 4.2@16V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 0.54 |
| Description |
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