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MOSFETs DMN2008LFU-7
Diodes Incorporated
DMN2008LFU-7
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual Common Drain |
| Package Width | 3 |
| Package Height | 0.58 |
| Package Length | 2 |
| Product Category | Power MOSFET |
| Supplier Package | UDFN EP |
| Standard Package Name | DFN |
| Typical Fall Time (ns) | 1208 |
| Typical Rise Time (ns) | 653 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1700 |
| Typical Gate Charge @ 10V (nC) | 42.3 |
| Typical Gate Charge @ Vgs (nC) | 18.7@4.5V|42.3@10V |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Turn-On Delay Time (ns) | 277 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 1989 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 14.5 |
| Typical Input Capacitance @ Vds (pF) | 1418@10V |
| Maximum Drain Source Resistance (mOhm) | 5.4@4.5V |
| Description |
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