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MOSFETs DMN2013UFX-7
Diodes Incorporated
DMN2013UFX-7
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 5 |
| Package Height | 0.88 |
| Package Length | 2 |
| Supplier Package | WDFN EP |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | DFN |
| Typical Fall Time (ns) | 13.7 |
| Typical Rise Time (ns) | 20.3 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2140 |
| Typical Gate Charge @ Vgs (nC) | 57.4@8V|42.4@4.5V |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Turn-On Delay Time (ns) | 8.6 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 42.5 |
| Maximum Gate Threshold Voltage (V) | 1.1 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 10 |
| Typical Input Capacitance @ Vds (pF) | 2607@10V |
| Maximum Drain Source Resistance (mOhm) | 11.5@4.5V |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Description |
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