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MOSFETs DMN2050LFDB
Diodes Incorporated
DMN2050LFDB
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual Dual Drain |
| Maximum IDSS (uA) | 1 |
| Typical Fall Time (ns) | 8 |
| Typical Rise Time (ns) | 8 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1420 |
| Typical Gate Charge @ 10V (nC) | 12 |
| Typical Gate Charge @ Vgs (nC) | 5.7@4.5V|12@10V |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Turn-On Delay Time (ns) | 25 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 25 |
| Maximum Gate Threshold Voltage (V) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4.5 |
| Typical Input Capacitance @ Vds (pF) | 389@10V |
| Maximum Drain Source Resistance (mOhm) | 45@4.5V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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