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MOSFETs DMN2300UFL4
Diodes Incorporated
DMN2300UFL4
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Product Category | Power MOSFET |
| Maximum IDSS (uA) | 1 |
| Typical Fall Time (ns) | 13 |
| Typical Rise Time (ns) | 2.8 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1390 |
| Typical Gate Charge @ Vgs (nC) | 1.6@4.5V |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Turn-On Delay Time (ns) | 3.5 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 38 |
| Maximum Gate Threshold Voltage (V) | 0.95 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 2.11 |
| Typical Input Capacitance @ Vds (pF) | 67.6@20V |
| Maximum Drain Source Resistance (mOhm) | 195@4.5V |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Description |
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