Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Automotive | No |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Dual Dual Drain |
Product Category | Power MOSFET |
Maximum IDSS (uA) | 1 |
Typical Fall Time (ns) | 3.6 |
Typical Rise Time (ns) | 3.3 |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 1800 |
Typical Gate Charge @ 10V (nC) | 21 |
Typical Gate Charge @ Vgs (nC) | 9.5@4.5V|21@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 137 |
Typical Turn-On Delay Time (ns) | 4.5 |
Maximum Drain Source Voltage (V) | 30 |
Typical Turn-Off Delay Time (ns) | 14 |
Maximum Gate Threshold Voltage (V) | 2 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 21 |
Typical Input Capacitance @ Vds (pF) | 1184@15V |
Maximum Drain Source Resistance (mOhm) | 12@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |