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DMN3016LDV-13
DMN3016LDV-13
MOSFETs DMN3016LDV-13
Diodes Incorporated
DMN3016LDV-13
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Drain
Product CategoryPower MOSFET
Maximum IDSS (uA)1
Typical Fall Time (ns)3.6
Typical Rise Time (ns)3.3
Number of Elements per Chip2
Maximum Power Dissipation (mW)1800
Typical Gate Charge @ 10V (nC)21
Typical Gate Charge @ Vgs (nC)9.5@4.5V|21@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)137
Typical Turn-On Delay Time (ns)4.5
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)14
Maximum Gate Threshold Voltage (V)2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)21
Typical Input Capacitance @ Vds (pF)1184@15V
Maximum Drain Source Resistance (mOhm)12@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 21A T/R
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