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MOSFETs DMN3025LFDF-13
Diodes Incorporated
DMN3025LFDF-13
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| EU RoHS | Compliant |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain |
| Product Category | Power MOSFET |
| Maximum IDSS (uA) | 1 |
| Typical Fall Time (ns) | 5.3 |
| Typical Rise Time (ns) | 4.4 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2100 |
| Typical Gate Charge @ 10V (nC) | 13.2 |
| Typical Gate Charge @ Vgs (nC) | 6@4.5V|13.2@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 66 |
| Typical Turn-On Delay Time (ns) | 3.3 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Gate Plateau Voltage (V) | 2.9 |
| Typical Turn-Off Delay Time (ns) | 22.3 |
| Maximum Diode Forward Voltage (V) | 1 |
| Typical Diode Forward Voltage (V) | 0.7 |
| Typical Gate to Drain Charge (nC) | 2.2 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate to Source Charge (nC) | 1.7 |
| Typical Reverse Recovery Time (ns) | 11.4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 8.3 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 641@15V |
| Typical Reverse Recovery Charge (nC) | 8.2 |
| Maximum Drain Source Resistance (MOhm) | 20.5@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 40 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.1 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 50@15V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 8.3 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 173 |
| Description |
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