Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Automotive | No |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single Triple Drain Quint Source |
Product Category | Power MOSFET |
Maximum IDSS (uA) | 1 |
Typical Fall Time (ns) | 93 |
Typical Rise Time (ns) | 12 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 1800 |
Typical Gate Charge @ Vgs (nC) | 4.9@4.5V |
Maximum Gate Source Voltage (V) | 6 |
Typical Turn-On Delay Time (ns) | 4.45 |
Maximum Drain Source Voltage (V) | 12 |
Typical Turn-Off Delay Time (ns) | 100 |
Maximum Gate Threshold Voltage (V) | 1.3 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 7.6 |
Typical Input Capacitance @ Vds (pF) | 457@6V |
Maximum Drain Source Resistance (mOhm) | 18@4.5V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |