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MOSFETs DMP2100UCB9-7-55
Diodes Incorporated
DMP2100UCB9-7-55
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Dual Common Source Triple Drain |
| Product Category | Power MOSFET |
| Maximum IDSS (uA) | 1 |
| Typical Fall Time (ns) | 28 |
| Typical Rise Time (ns) | 7 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1600 |
| Typical Gate Charge @ Vgs (nC) | 3.3@4.5V |
| Maximum Gate Source Voltage (V) | -6 |
| Typical Turn-On Delay Time (ns) | 8.5 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 47 |
| Maximum Gate Threshold Voltage (V) | 0.9 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3 |
| Typical Input Capacitance @ Vds (pF) | 232@10V |
| Maximum Drain Source Resistance (mOhm) | 100@4.5V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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