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MOSFETs DMT3006LPB-13
Diodes Incorporated
DMT3006LPB-13
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 5.75 |
| Package Height | 1.05(Max) |
| Package Length | 4.9 |
| Product Category | Power MOSFET |
| Supplier Package | PowerDI EP |
| Typical Fall Time (ns) | 4.6@Q 2|1.8@Q 1 |
| Typical Rise Time (ns) | 5.5@Q 2|3.3@Q 1 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1700 |
| Typical Gate Charge @ 10V (nC) | 16.7@Q 2|12.6@Q 1 |
| Typical Gate Charge @ Vgs (nC) | 16.7@10V@Q 2|8.4 @4.5V|12.6@10V@Q 1|6.3@4.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 3.5@Q 2|4.6@Q 1 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 13.5@Q 2|10.2@Q 1 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 14@Q 2|11@Q 1 |
| Typical Input Capacitance @ Vds (pF) | 1155@15V@Q 2|841@15V@Q 1 |
| Maximum Drain Source Resistance (mOhm) | 6@10V@Q 2|11.1@10V@Q 1 |
| Description |
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