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MOSFETs DMTH69M8LFVWQ-13
Diodes Incorporated
DMTH69M8LFVWQ-13
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | Yes |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | Yes |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 3.05 |
| Package Height | 0.8(Max) |
| Package Length | 3.05 |
| Product Category | Power MOSFET |
| Supplier Package | PowerDI EP |
| Typical Fall Time (ns) | 15.7 |
| Typical Rise Time (ns) | 8.6 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3600 |
| Typical Gate Charge @ Vgs (nC) | 33.5@10V|15.6@4.5V |
| Maximum Gate Source Voltage (V) | ±16 |
| Typical Turn-On Delay Time (ns) | 4.5 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 35.9 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 15.9 |
| Typical Input Capacitance @ Vds (pF) | 1925@30V |
| Maximum Drain Source Resistance (mOhm) | 9.5@10V |
| Description |
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