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MOSFETs DN2625DK6-G
Microchip Technology
DN2625DK6-G
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541290095 |
| PPAP | No |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tray |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Depletion |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 5 |
| Package Height | 0.85(Max) |
| Package Length | 5 |
| Supplier Package | DFN EP |
| Maximum IDSS (uA) | 1100000(Min) |
| Process Technology | DMOS |
| Standard Package Name | DFN |
| Typical Fall Time (ns) | 20(Max) |
| Typical Rise Time (ns) | 20(Max) |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs (nC) | 7.04(Max)@1.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 10(Max) |
| Maximum Drain Source Voltage (V) | 250 |
| Typical Turn-Off Delay Time (ns) | 10(Max) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1.1 |
| Typical Input Capacitance @ Vds (pF) | 800@25V |
| Maximum Drain Source Resistance (MOhm) | 3500@0V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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