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DN3135K1-G
DN3135K1-G
MOSFETs DN3135K1-G
Microchip Technology
DN3135K1-G
--
Diodes, Transistors and Thyristors
MOSFETs
DN3135K1-G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeDepletion
Channel TypeN
ConfigurationSingle
Package Width1.3
Package Height0.95
Package Length2.9
Product CategoryPower MOSFET
Supplier PackageSOT-23
Maximum IDSS (uA)180000(Min)
Process TechnologyVDMOS
Standard Package NameSOT
Typical Fall Time (ns)20(Max)
Typical Rise Time (ns)15(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)360
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)6
Typical Turn-On Delay Time (ns)10(Max)
Maximum Drain Source Voltage (V)350
Typical Turn-Off Delay Time (ns)15(Max)
Maximum Diode Forward Voltage (V)1.8
Typical Reverse Recovery Time (ns)800
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.072
Typical Input Capacitance @ Vds (pF)60@25V
Maximum Drain Source Resistance (mOhm)35000@0V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)0.3
Typical Reverse Transfer Capacitance @ Vds (pF)3@25V
Description
Trans MOSFET N-CH Si 350V 0.072A 3-Pin SOT-23 T/R
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